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Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

机译：核-壳型InGaN / GaN纳米线发光二极管通过电子束感应电流显微镜和阴极发光映射分析

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International audience

机译：国际观众

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Tchernycheva, M; Neplokh, V; Zhang, H; Lavenus, P; Rigutti, L; Bayle, F; Babichev, A; Jacopin, G; Largeau, L; Ciechonski, R; Vescovi, G; Kryliouk, O;
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专利

1. Influence of electron-beam irradiation in SEM on the cathodoluminescence and electron-beam-induced current in InGaN/GaN light-emitting diodes with a buried active region [J] . Vergeles P.S., Shmidt N.M., Yakimov E.B. Journal of surface investigation: x-ray, synchrotron and neutron techniques . 2012,第6期

机译：SEM中电子束辐照对具有埋入式有源区的InGaN / GaN发光二极管中阴极发光和电子束感应电流的影响
2. Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode [J] . Wallace M.J., Edwards P.R., Kappers M.J., Journal of Applied Physics . 2014,第3期

机译：InGaN / GaN发光二极管的阴极发光和电子束感应电流的偏置相关性和相关性
3. Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode [J] . M. J. Wallace, P. R. Edwards, M. J. Kappers, Journal of Applied Physics . 2014,第3期

机译：InGaN / GaN发光二极管的阴极发光和电子束感应电流的偏置相关性和相关性
4. High Power Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire White Light Emitting Diodes on Si Substrates [C] . Z. Mi, H. P. T. Nguyen, M. Djavid, International symposium on silicon compatible materials, processes, and technologies for advanced integrated circuits and emerging applications 4;Meeting of the Electrochemical Society . 2014

机译：硅衬底上的高功率无磷InGaN / GaN / AlGaN核壳纳米线白光发光二极管
5. Investigation and Analysis of Thermal Performance of InGaN/GaN Light Emitting Diodes [D] . Das, Shiladitya. 2017

机译：InGaN / GaN发光二极管热性能的调查分析
6. Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes [O] . Mohsen Nami, Isaac E. Stricklin, Kenneth M. DaVico, -1

机译：高性能GaN / InGaN核壳纳米线发光二极管的载流子动力学和光电特性
7. Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping [O] . Tchernycheva, M, Neplokh, V, Zhang, H, 2015

机译：核-壳型InGaN / GaN纳米线发光二极管通过电子束感应电流显微镜和阴极发光映射分析

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

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